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23aXJ-3 Pressure Effects on Near-infrared Photoluminescence from Boron-implanted Silicon
23aXJ-3 Pressure Effects on Near-infrared Photoluminescence from Boron-implanted Silicon
2006
Y. Ishibashi
I. Matsubara
Tomobumi Mishina
T. Kobayashi
Jun′ichiro Nakahara
Keywords:
Radiochemistry
Boron
Photoluminescence
Near-infrared spectroscopy
Materials science
Silicon
Optoelectronics
Correction
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