Pion-induced damage in silicon detectors

Abstract The damage induced by pions in silicon detectors is studied for positive and negative pions for fluences up to 10 14 cm −2 and 10 13 cm −2 , respectively. Results on the energy dependence of the damage in the region of 65 to 330 MeV near to the Δ resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron- and proton-induced damage are presented and discussed.