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Electrical Properties of Lanthanum-Scandate Gate Dielectric Directly Deposited on Ge
Electrical Properties of Lanthanum-Scandate Gate Dielectric Directly Deposited on Ge
2009
M. K. Bera
Jeong-Hwan Song
Kuniyuki Kakushima
Parhat Ahmet
Kazuo Tsutsui
Nobuyuki Sugii
Takeo Hattori
Hiroshi Iwai
Keywords:
Gate dielectric
Lanthanum
Gate oxide
Analytical chemistry
Materials science
Optoelectronics
Correction
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