Amorphous r.f.-sputtered Si100−xNix thin films with 0≤x≤15 at.%: Structural, optical and electrical properties

Abstract The temperature dependence of the conductivity (between 15 and 300 K) and optical transmission spectra (between 0.8–3.5 μm) have been measured on r.f.-sputtered Si 100− x Ni x with 0≤ x ≤15. The films were characterized by Rutherford backscattering spectroscopy and X-ray diffraction. Changes in the optical sub-bandgap structure, with corresponding changes in the conduction mechanism take place by varying the Ni content. The films are amorphous, showing a main broad diffraction peak. Its position deviates, for this concentration range, from 2 k F ( k F =Fermi radius), the alloy losing the Hume–Rothery character present for 50≤ x ≤60.