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4,308V, 20.9 m Omega center dot cm(2) 4H-SiC MPS diodes based on a 30 mu m drift layer
4,308V, 20.9 m Omega center dot cm(2) 4H-SiC MPS diodes based on a 30 mu m drift layer
2004
Jingshen Wu
Fursin L
Yu Zhu Li
Alexandrov P
Jian H. Zhao
Keywords:
Optoelectronics
Materials science
Composite material
Diode
Omega
Correction
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