A method of manufacturing a bonded wafer paste

The present invention is a method for producing a bonded wafer, the bonded wafer manufacturing method comprising: using a batch-type ion implantation step of the ion implanter; ion implanting the surface of the surface of the substrate wafer of the bonded wafer directly or via an insulating film bonded to the bonding step; and a release layer bonded wafer by the ion implantation and the production wafer having a film on a substrate peeling step of the bonded wafer, method for manufacturing the bonded wafer wherein , split into multiple wafer bonded to the ion implantation step, ion implantation, and the implanted ions after each predetermined rotation angle of the rotation only bonded wafer, and ion-implanted at a position of rotation is configured. Thus, to provide an improved method for film on a substrate wafer for producing a bonded wafer of the SOI layer film thickness uniformity of the bonded wafer level manufacturing, especially in mass production.