Silicon Structures for Power Electronics

In the present communication we consider the major requirements to the properties of low-doped working layers of multiplayer structures used in manufacturing power high-voltage transistors, thyristors and IGBT devices, which are the most widespread types of high-power high-voltage discrete devices. It is demonstrated experimentally how the non-uniformity of thickness and resistivity of the low-doped working layer can affect the parameters of high-power MDS transistors. We analyse the reasonability of using two- and three-layered structures formed by direct bonding, involving neutron-doped silicon grown by floating zone melting (FZ-Si) for the working low-doped layer, in manufacturing power electronic devices with U break > 800 V. It is demonstrated that an alternative for FZ-Si can be silicon, grown according to Czochralski technique under an applied magnetic field (CZM), with oxygen content < (4–5)10 17 cm –3 .