Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors
2016
We model and simulate the resonant tunneling and I-V characteristics of Interlayer Tunneling Field-Effect Transistors (ITFETs) based on transition metal dichalcogenide monolayers, MoS 2 layers here, using quantum transport simulations with a full-band model. Gate-controllable resonant peaks are demonstrated and the short channel effects on resonance broadening are studied.
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