Effect of UV-Assisted RTA on the Electrical Properties of ( Ba , Sr ) TiO3 Films for Low Temperature Embedding of Decoupling Capacitor

Polycrystalline Ba 0.4 Sr 0.6 TiO 3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high-k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μm 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1 X 10- 8 A/Cm 2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/V 2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.