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Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer
Reduction of threading dislocations density in GaN on sapphire by in-situ SixNy interlayer
2004
K. Pakuła
R. Bożek
Małgorzata Kowalska
E. Zielińska-Rohozińska
J. M. Baranowski
Keywords:
Threading (manufacturing)
Crystallography
Sapphire
Dislocation
Materials science
Optoelectronics
threading dislocations
In situ
Correction
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