Optimization ofSubstrate Doping forBack-Gate Control inSOIT-RAMMemoryTechnology

Thispaper presents various considerations forsubstrate doping optimization inSOIT-RAMtechnology. Backgate(substrate voltage) control isusedinanSOIT-RAMtechnology for optimizing cell characteristics. However, itisreported forthe first timethat typical low-doped substrates usedinSOIlogic technologies cancreate unusually slowtransient effects inTRAM cell. Itisalsodemonstrated thattheoptimization of substrate doping resolves thisslowtransient problem and improves backgate control ofSOIT-RAMmemoryarrays.