Vapor–Solid–Solid Growth of NiSi $_2$ Nanocrystals for Memory Application

NiSi 2 nanocrystals were synthesized by vapor-solid-solid process, introducing SiH 4 onto Ni catalyst dots on a SiO 2 substrate, for nonvolatile memory applications. Electron microscopy was used to characterize the morphology and X-ray photoelectron spectroscopy characterization confirmed the nature of these NiSi 2 nanocrystals. mosfet memory with NiSi 2 nanocrystal as floating gate was fabricated and fast programming/erasing speed, long retention, and 10 5 times of operation endurance performances were demonstrated.