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Acemap > Paper > 28pAM-13 Si(001)基板上3C-SiCエピタキシャル薄膜における積層欠陥発生プロセスの収差補正TEM解析(28pAM 格子欠陥・ナノ構造(金属・半導体・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))

28pAM-13 Si(001)基板上3C-SiCエピタキシャル薄膜における積層欠陥発生プロセスの収差補正TEM解析(28pAM 格子欠陥・ナノ構造(金属・半導体・転位・面欠陥),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))

2014 
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