Research on Internal Temperature Distribution of Crystals in CZ Silicon Single Crystal Growth Process Based on Finite Element Model

Aiming at the control problem of crystal micro-defects in the growth process of Cz crystal growth, this paper proposes a new solution strategy, which is to reduce crystal micro-defects by optimizing the internal temperature distribution of the crystal. The strategy uses the internal heat transfer formula of the crystal to establish a finite element numerical model, and considers the radiant heating power and temperature gradient constraints, and then optimizes the optimal temperature distribution inside the crystal by the ant lion algorithm (ALO) to meet the desired size requirements. The simulation optimization results show that the proposed method is reasonable and reliable, and meets the requirements of radial micro-defects for radial temperature gradient.