Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof

The invention relates to an enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. The device comprises an AlGaN/GaN heterojunction structure located on the surface of a substrate and gate, source and drain electrode structures, wherein F ion or Cl ion fixed negative charges are arranged in a gate dielectric film material. In the invention, through introducing the F ion or Cl ion fixed negative charges into a gate dielectric film and controlling the electric charge quantity of the introduced fixed negative charges, the threshold voltage of a transistor is regulated and the enhanced AlGaN/GaN HEMT device with the threshold voltage greater than zero is realized. In the invention, the enhanced AlGaN/GaN HEMT device structure is obtained though a method of introducing the fixed negative charges into the gate dielectric film material; interface characteristics of the AlGaN/GaN heterojunction are not influenced so that the performance degeneration of the device is not caused; the process is simple and controllable and is compatible with the manufacturing process of a depletion mode (normally-on) AlGaN/GaN HEMT device; the source-drain saturation current density and the gate-drain current of the manufactured device for manufacturing a GaN enhanced effect transistor are small; and therefore, the device is particularly suitable for developing a GaN logic circuit.