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RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate
RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate
2018
Shiratori Yuta
Hoshi Takuya
Ida Minoru
Matsuzaki Hideaki
Keywords:
Performance improvement
Heterojunction
Optoelectronics
Bipolar junction transistor
Substrate (chemistry)
Materials science
heat spreading
Correction
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