EUVL challenges towards 1x nm generation

EUVL applicability to mass production in 2x nm generations has been proved by recent developments. For 1x nm generations, three major lithography candidates to be applied for mass productions are discussed, quadruple patterning, EUVL single patterning and EUVL double patterning. Three candidates are compared from following viewpoints, lithography performance, process cost and turn around time. Through the comparison, EUVL is the most promising way to 1x nm generations. EUVL single patterning has an advantage of cost and TAT and EUVL double patterning has a potential to extend resolution limit to 0x nm hp.