Characterization of Advanced Sequential Flow Deposition (ASFD) TiON electrode in MIM structure for leakage current reduction

Advanced Sequential Flow Deposition (ASFD) TiON electrode was developed and mechanism of leakage current reduction with ASFD TiON electrode was studied. ASFD TiON film was fabricated by repeating TiN layer formation and oxidation. Resistivity and crystal structure depended on oxygen concentration in TiON film. Oxygen concentration was controlled precisely by oxidation frequency. Electrical characteristic was evaluated using Metal Insulator Metal (MIM) structure. We observed lower leakage current when oxygen concentration in TiON film was higher. Element analysis of high-k capacitance (Al2O3/ZrO2) indicated that TiON top electrode suppressed leakage current caused by Poole-Frenkel conduction.