Crystallization and morphology changes in tantalum di-silicide: a transmission-electron-microscope study

The early stages of crystallization and grain growth of tantalum di-silicide in sputter deposited single phase amorphous films were studied using transmission-electron microscopy. A calibrated hot stage was used to enable direct observation to be made at temperatures from 350 to 950/sup 0/C. Sharpening of the original diffuse amorphous diffraction patterns indicated that crystallization began after approximately 40 minutes at 350/sup 0/C. Heating to slightly higher temperatures (375 to 400/sup 0/C) resulted in fully developed diffraction patterns corresponding to crystalline tantalum di-silicide. At higher temperatures, 850 to 950/sup 0/C, grain growth and indications of significant volume reduction were observed.