Reliability of 4H-SiC DMOSFETs Evaluated by Bias Stressing
2007
In this work, the threshold voltage (V TH ) of n-channel 4H-SiC double-implanted metal-oxide- semiconductor field effect transistors (DMOSFETs) was measured after different gate-bias-stress durations to determine if the bias-stress induces a shift in the V TH .
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
1
Citations
NaN
KQI