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0.1‐μm InAlAs/InGaAs HEMTS with an InP‐recess‐etch stopper grown by MOCVD
0.1‐μm InAlAs/InGaAs HEMTS with an InP‐recess‐etch stopper grown by MOCVD
1996
Takatomo Enoki
Hiroshi Ito
Kenji Ikuta
Yohtaro Umeda
Yasunobu Ishii
Keywords:
Metalorganic vapour phase epitaxy
Ring oscillator
Electronic engineering
Threshold voltage
High-electron-mobility transistor
Mathematics
Correction
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