Electrical and structural properties of polycrystalline 3C-SiC layer regrown from amorphized 4H-SiC(0 0 0 1) by P and Al ion implantations

Abstract We investigate the structural and electrical properties of polycrystalline 3C-SiC grown from P and Al ion implanted 4H-SiC. P ions are multiply implanted at a fluence of 1.6 × 10 16 /cm 2 to form a box-shaped doping profile with concentration of 6 × 10 20 /cm 3 and thickness of 400 nm for p-type epitaxial 4H-SiC layer, and Al ions are multiply implanted at a fluence of 7.2 × 10 15 /cm 2 to form a doping layer with Al concentration of 3 × 10 20 /cm 3 and thickness of 300 nm. RBS measurement reveals that P ion implanted layer contained a large amount of defects, which remains even after annealing at 1700 °C. X-TEM observation shows the P ion induced amorphous layer is recrystallized to the twinned-3C-SiC. After annealing at 1700 °C, the sheet resistance of 200 Ω/sq. and 12 kΩ/sq. is obtained for P and Al doped polycrystalline 3C-SiC, respectively. Ti, Al, and Ni metal contact to recrystallized both n- and p-type polycrystalline 3C-SiC layers show an ohmic characteristics without metallization. Specific contact resistance for n- and p-type polycrystalline 3C-SiC layers is estimated to be the order of 10 −7 and 10 −3  Ω cm 2 , respectively. The specific contact resistance of Ni contact to p-type polycrystalline 3C-SiC is reduced to the order of 10 −5  Ω cm 2 by annealing at 700 °C.