Correlation of afterglow, trap states and site preference in RE2O3:1%Eu (RE = Lu, Y, Sc) single crystal scintillators

Abstract RE 2 O 3 :1%Eu (RE=Lu, Y, Sc) single crystals were grown by the optical floating zone method. Correlated measurements of afterglow curves, thermoluminescence, photoluminescence decay, and radioluminescence curves were performed. It is found that the afterglow intensity of Sc 2 O 3 :Eu is much lower than the other two compounds and Y 2 O 3 :Eu presents a slightly lower afterglow intensity than Lu 2 O 3 :Eu. It is discussed in the light of the influence of trap states and site preference in the RE 2 O 3 :Eu. The afterglow difference between Sc 2 O 3 :Eu and other two compounds mainly comes from the disappearance of Schottky defect in Sc 2 O 3 :Eu. Meanwhile the afterglow difference between Y 2 O 3 :Eu and Lu 2 O 3 :Eu probably ascribes to the lower S 6 site ratio in Y 2 O 3 :Eu. Their photoluminescence and other radioluminescence properties were also measured and compared.