High-depth-resolution SIMS analysis for InGaAs/InP interfaces

Abstract The influence of the primary ion impact conditions and of the surface chemical composition on beam-induced effects is investigated in order to achieve a high-depth-resolution analysis for the InGaAs/InP interfaces. The main result is that the oxygen adsorption with an appropriate pressure on the Cs + bombarded surface can suppress the element-dependence of depth resolution which is an artefact in SIMS analysis.