Production of a metallic thin film on AlN surface by UV laser radiation
1997
Abstract The effect of KrF excimer laser irradiation on aluminum nitride (AlN) surface in air for different irradiation conditions has been analyzed by Auger electron spectroscopy (AES), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) to monitor the changes in the chemical composition of the near surface layer. Irradiation with pulses of fluences exceeding 2 J/cm 2 results in formation of a thin film of aluminum on the AlN surface. This leads to an increase in the surface electrical conductivity. Local transformation of an insulator to a material with a conducting surface in a small depth could be interesting for applications such as microelectronics where this material is used.
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