Wires Formation in the Molecular Beam Epitaxy Growth of GaAs/GaAs(631) Characterized by RHEED

Introduction We report a study by Reflection High-Energy Electron Diffraction (RHEED) of the wire-like arrays (WRs) formation in the homoepitaxial growth of GaAs on substrates of GaAs oriented in the [631] direction. The self-assembling of the WRs was induced in the growth process by Molecular Beam Epitaxy [1] and was monitored by in situ RHEED technique. We present typical RHEED patterns of some relevant directions and its corresponding with the atomic distribution of each direction.