Fast soft reverse recovery diodes and thyristors with axial lifetime profile created by indium diffusion

The results of a study carried out on P + PNN + silicon power diodes diffused with indium at temperatures ranging from 850 to 950 degC are reported. The influence on of indium diffusion on parameters of power diodes with a designed breakdown voltage of about 2500 V was studied; results were compared with diode structures diffused with gold and reference samples without recombination centre diffusion. It was found that indium diffusion might he used successfully for the fabrication of fast, soft reverse recovery power diodes and thyristors