1.5nm Equivalent Thickness Ta,O, High-k Dielectric with Rugged Si Suited for Mass Production of High Density DRAMs

A 1 Snm equivalent thickness TazOshugged Si capacitor is demonstrated for mass production of high density DRAM (Dynamic Random Access Memory)s. More than 10 years breakdown lifetime of CVD-TIN/ TazOdrugged Si capacitor is experimentally clarified for the first time. Excellent pause refresh property is confirmed by using 0.40mm2 DRAM cell as well. This system is applicable to 0. 16mm2 cell for production.