Interstrip characteristics of n-on-p FZ silicon detectors

We report on the measurement of interstrip parameters of p-type silicon strip sensors which we are developing in a large collaboration to be used in a future tracker for the LHC upgrade. We measure on test structures with about 1 cm long strips the interstrip resistance, interstrip capacitance (at 1 MHz) and punch-through protection both pre-rad and after irradiation with 70 MeV protons to a fluence of 1.5×10^13 p/cm^2, corresponding to about 1 MRad, from prototyping runs with Hamamatsu Photonics and Micron Semiconductors. We report the values for a variety of isolation scenarios of p-stops, p-spray and a combination of both.