An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs

Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabrication capability which is quite versatile in being able to produce digital, analog, mixed signal, and optoelectronic ICs within the same process. This enables the fab line to quickly respond to varying demands. Three ICs are discussed which exemplify the capability of this fab: (1) a 7 GHz 12-bit accumulator; (2) a nearly ideal continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator operating at a 3.2 GHz sample rate; and (3) a monolithic 4-channel optoelectronic receiver array capable of 20 Gb/s operation.