Spin polaronic shift of an acceptor bound polaron InAGaMnAs/GaAs quantum well

Acceptor bound spin polaron is estimated in a GaMnAs/GaAs quantum well using mean field approximation with the Brillouin function for different concentration of Mn ions. The spin polarization which is the free carrier two dimensional sheet concentration is calculated for the valence band holes. We present a theoretical study of diluted magnetic semiconductors treating the local p-d exchange interaction J between the itinerant carriers and the Mn electrons within a realistic band structure.