Passivation and gating of GaAs and Si surfaces using pseudomorphic structures

Abstract : During the first quarter we began work directed at the Silicon- Gallium arsenide interface formation. This work encompasses the in situ cleaning process and the Silicon deposition process. Advances have been made in the GaAs in situ cleaning. The reasons for the advances, recognition of Silicon dioxide deposition byproduct residue and additions of a load lock to the system, are described. Work towards improving the pseudomorphic Si deposition is also described. During the second quarter work continued on the Gallium arsenide- Silicon interface formation. We had noted improvements in the low temperature Silicon epitaxial deposition through the incorporation of hydrogen in the deposition environment. Also we noted improvements in the Silicon deposition through the use of lower pressure conditions. The results of the use of Metal- insulator Semiconductor results obtained on both p-type and n-type Gallium arsenide-Silicon with partially optimized processing are described. These Silicon deposition conditions for Metal-insulator Semiconductor structure formation are described. During the third and fourth quarters work again continued on the Gallium-arsenide-Silicon interface formation. During this period a series of experiments was performed to evaluate the effects of processing conditions on the p-type GaAs MIS structure. MIS, Pseudomorphic Si on GaAs in Situ GaAs Cleaning, Passivation, Semiconductors, Gating technology.