X_ray grading procedure for conventional 65-nm CMOS technology

This work presents a solution for radiation hardness grading procedure using compact X-ray facility built in probe station, with automated measurement system based on NI PXI platform. The radiation grading procedure can be integrated as additional stage to provide rad-hard option of conventional process. Using the radiation grading procedure as a stage of IC fabrication process, the total ionizing dose (TID) hardness capability was estimated for commercial 65-nm CMOS test structures.