Wafer pcb and manufacturing method of semiconductor light emitting device using thereof

A wafer substrate and a method for manufacturing a semiconductor light emitting device using the same are provided to improve the wavelength uniformity of an LED(Light Emitting Device) wafer by forming patterns which generates a concave down phenomenon on a rear of a wafer substrate. Plural patterns(112) are formed on a rear of a wafer substrate(110). A semiconductor layer(120) is grown on an upper surface of the wafer substrate. A pattern interval at the rear center part of the wafer substrate is wider than that at the other part. The rear pattern of the wafer substrate is formed as one of a bar shape, a con shape, a trapezoid shape, and a hemisphere shape by using an etching apparatus. When the semiconductor layer is grown, a buffer layer(122) is formed on the wafer substrate. An n-type nitride layer(124) is formed on the buffer layer. An active layer(126) is formed on the n-type nitride layer. A p-type nitride layer(128) is formed on the active layer.