Influence of Temperature on MOCVD Growth of InGaN

InGaN thin films are grown on GaN/sapphire composite substrate by metalorganic chemical vapor deposition (MOCVD) between 550℃and 700℃.The effect of growth temperature on the properties of the InGaN films is studied by means of X-ray diffraction (XRD) and photoluminescence (PL).InGaN with higher In composition was obtained at a lower temperature. However.10w growth temperature and high In composition degrade the crystal quality of InGaN.The XRD measurement indicated that there is no phase separation in the sample with In composition as high as 0.57.The PL peak ell· ergy shifts to lower energy with increasing In composition，and the full width at half width(FWHM)of the PL peak increa· ses with increasing In composition.