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Development of low dislocation density GaN for 380nm LEDs
Development of low dislocation density GaN for 380nm LEDs
2005
Hong Guan
A. R. Boyd
E. J. Thrush
O. Feron
H. Kuan
C.Y. Liang
Rachel A. Oliver
R. Datta
M. J. Kappers
M. E. Vickers
J. S. Barnard
C. J. Humphreys
Keywords:
Optoelectronics
Light-emitting diode
Dislocation
Materials science
Correction
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