A NMOS 64K static RAM

A. Ebel,G. Atwood,E. So,S. Liu,V. Kynett,R. Jecmen,J. Mingo,Haiping Dun

A NMOS 64K static RAM

1982

A. Ebel
G. Atwood
E. So
S. Liu
V. Kynett
R. Jecmen
J. Mingo
Haiping Dun

A 50ns 8K×8 static RAM developed with a double-poly/ scaled NMOS technology will be reported. The RAM memory cell is 0.5 mil 2 resulting in a 64K die size of 54756 mil 2 .

Keywords:

Parallel computing
Computer science
Electronic engineering
NMOS logic
Non-volatile random-access memory
Memory refresh
Magnetoresistive random-access memory
Computer hardware
Static random-access memory
Memory cell
Tag RAM

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