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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
2020
Andrea Severino
Ruggero Anzalone
Nicolò Piluso
Elisa Vitanza
B. Carbone
Alfio Russo
Salvo Coffa
Keywords:
device failure
Composite material
Etching
threading dislocations
MOSFET
Materials science
Correction
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