Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

The conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value.