Fabrication and Electrical Characterisation of n-InAs Single Nanowhisker Field-Effect Transistors

We fabricated and characterised an n-InAs nanowhisker field effect transistors. Nanowhiskers were grown by metal-organic vapour-phase epitaxy (MOVPE) using the vapour-liquid-solid (VLS) growth mode. The fabricated device exhibits a high normalized transconductance (g m /w g ) of 895 mS/mm and electron mobility above 4800 cm 2 /Vs