Electrical properties of chemical-doped and ion-implanted polyacetylene films

Abstract The electrical properties of chemical-doped and ion-implanted polyacetylene films are studied. Large increases in p-type conductivity upon chemical doping using FeCl 3 and K + ion-implanted samples in n-type conductivity are observed. A method of combining chemical doping with low energy ion implantation (30 keV K + ) makes it possible to fabricate a stable diode-like PA at the near-surface region. The current density of the polymeric diode can be raised as high as 600 mA/cm 2 at 3 V, and the backward-to-forward ratio of current can be 500. As for the conductivity enhancement mechanism in ion-implanted PA films, conductive dangling bond and free radical formation by the implantation induced defects are discussed.