90nmPhaseChangeTechnology withptTrench andLanceCellElements

array asmainBit-Line, andline3 usedonlyinperiphery (oras PhaseChangeMemoryisrapidly emerging asapromising next global WL).Thecontact between line2 andGSTline isformed generation nonvolatile memory, offering unique capabilities for using anad-hoc strap. performance andfunctionality. Integration ofthechalcogenide Electrical Characterization phasechange material into amemorycell structure andmemory Theelectrical characterization andcomparison ismainly focused array offers manychallenges andopportunities. Inthis paper, the onthememorycell, since thebipolar select transistors arenot electrical properties oftwopossible cell structures, JTrench and impacted bythecell integration choice. Lance, willbecompared using multi-megabit arrays at90nm. Reset Current: A keyconsideration inthecell structure design is Results oftheintegration ofPCM at90nmusing abipolar selector thereset current. Write power, andthus thewrite performance for andwithacell areaof12F2will bedescribed, demonstrating the agiven powerbudget isafunction ofreset current andvoltage. suitability ofPCM forhighdensity memoryapplications Thesmall contact areaoftheTrench heater (A00nM2) isvery