Electroluminescence at a wavelength of 1.5 μm in Si:Er/Si diode structures doped with Al, Ga, and B acceptors

Si:Er layers in diode structures were doped with Al, Ga, or B during growth by sublimation molecular-beam epitaxy. As a result, a sharp increase in the electroluminescence intensity at a wavelength of 1.5 μm was observed in diodes with thick bases (as large as 0.8 μm).