Photoluminescence Study of CuIn1-xGaxSe2 Mixed Crystals
1993
Photoluminescence of CuIn1-xGaxSe2 mixed crystals has been investigated. The emission band maximum shifts towards higher photon energies with increasing excitation intensity indicating the donor-acceptor recombination mechanism. The energies of the shallow defect states have been determined from the thermal quenching curves.
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