Graphite growth influenced by crystallographic faces of Ni films
1998
We grew graphite by chemical vapor deposition at 700 °C on a Ni thin film having a Ni(100), Ni(111) or Ni(110) face parallel to the Ni thin-film surface. We found that the growth rate of graphite on the Ni(100) face is faster than that on the Ni(111) or Ni(110) face.
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