Growth and structure characterization of EuSi2 films and nanoislands on vicinal Si(001) surface

Abstract Europium silicide nanoislands and films with Eu coverage in the range 0.3 ML–303 ML were grown on the vicinal Si(001) surface with 4° miscut towards [110] by molecular beam epitaxy. The nanostructures were characterized by atomic force microscopy, reflection high energy electron diffraction, in situ synchrotron radiation X-ray absorption near edge structure spectroscopy and ex situ X-ray diffraction. The analysis revealed the formation of EuSi 2 with a tetragonal structure. By increasing the Eu coverage the surface morphology gradually changes from isolated islands through films with very rough surface to thick films with smoother surface.