First observation of the EL2 lattice defect in indium gallium arsenide grown by molecular-beam epitaxy

We have used majority-carrier deep-level transient spectroscopy (DLTS) and photocapacitance measurements in a study of lattice defects present in 1.5 μm thick layers of n-type In x Ga 1-x As, 0.045≤x≤0.18, grown by molecular-beam epitaxy (MBE) on n-GaAs substrates. Each composition shows in the DLTS data an electron trap whose electron-emission parameters agree with those known for the EL2 defect in InGaAs grown by vapor-phase epitaxy, and also the photocapacitance quenching that is characteristic of EL2 traps