Magnetoresistance and capacitance oscillations and hysteresis in type-II InAsSbP ellipsoidal quantum dots

The InAsSbP composition type-II quantum dots (QDs) are grown on a InAs(1 0 0) substrate from In-As-Sb-P quaternary liquid phase at a constant temperature in Stranski–Krastanow growth mode. Device structures in the form of photoconductive cells are prepared for investigation. Magnetospectroscopy and high-precision capacitance spectrometry are used to explore the QDs structure's electric sheet resistance in a magnetic field and the capacitance (charge) law at lateral current flow. Aharonov–Bohm (AB) oscillations with the period of δB = 0.38 ± 0.04 T are found on the magnetoresistance curve at both room and liquid nitrogen temperatures. The influence of the QDs size distribution on the period of AB oscillations is investigated. The magnetoresistance hysteresis equals to ~50 mΩ and ~400 mΩ is revealed at room and liquid nitrogen temperature, respectively. The capacitance hysteresis (CH) and contra-directional oscillations are also detected. Behavior of the CH versus applied voltage frequency in the range f = 103–106 Hz is investigated. It is shown that the CH decreases with increasing frequency up to 106 Hz. The time constant and corresponding frequency for the QDs R–C parallel circuit (generator) equal to τ = 2.9 × 10−7 s and f 0 = 5.5 × 105 Hz, respectively, are calculated.