Studies on Different Doped Zn Concentrations of CdSe Thin Films

Different Zn concentration was doped with CdSe thin films by Electron Beam Evaporation method. Crystallite variation was studied for doping effect and it was found to be about 40 to 50 nm respectively. Optical band gap values are found to be modified by doping as well as annealing. Annealed films showed considerable influence in their optoelctronic and structural properties, which provided improvement in conversion efficiency of about 2.75% and 2.87% respectively.