Study on the Polycrystalline Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm−1, deposition rate of 9.64 A/s and SEM grain size of ∼3000 A.